| 摘要 |
This semiconductor device (100) is provided with a thin film transistor (5) which is provided on a substrate and comprises a gate electrode (12), a gate insulating layer (20) that is in contact with the gate electrode, an oxide semiconductor layer (18) that is arranged so as to partially overlap the gate electrode with the gate insulating layer being interposed therebetween, a source electrode (14) and a drain electrode (16). The oxide semiconductor layer (18) comprises a gate facing region (18g) that overlaps the gate electrode when viewed from the normal direction of the substrate and offset regions (18os, 18od) which are provided adjacent to the gate facing region and do not overlap any one of the gate electrode, the source electrode and the drain electrode when viewed from the normal direction of the substrate. The gate facing region has a carrier concentration of from 1 × 1017/cm3 to 1 × 1019/cm3 (inclusive). |
