发明名称 METHODS, DEVICES AND SYSTEMS USING OVER-RESET STATE IN A MEMORY CELL
摘要 Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
申请公布号 US2015357038(A1) 申请公布日期 2015.12.10
申请号 US201514827024 申请日期 2015.08.14
申请人 MICRON TECHNOLOGY, INC. 发明人 Spessot Alessio;Fantini Paolo;Ferro Massimo
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项 1. A system comprising: an array of resistive memory cells; and a controller coupled to the array, the controller being configured to apply different single waveforms to memory cells of the array of resistive memory cells to program the memory cells to correspondingly different ones of a plurality of over-reset states, wherein each of the plurality of over-reset states represents a distinct logic value of a plurality of logic values.
地址 Boise ID US