| 发明名称 |
SEMICONDUCTOR DEVICE FOR HIGH-POWER APPLICATIONS |
| 摘要 |
Contemplated is a semiconductor device comprising: a substrate; a group (III)-nitride layer; a metal-group (III)-nitride layer deposited between the substrate and group (III)-nitride layer; and a metal-nitride layer deposited between the substrate and the metal-group (III)-nitride layer. Also a method for making a semiconductor device with the above mentioned structure is contemplated. Furthermore, the substrate can be a silicon on insulator (SOI) substrate; the metal-nitride layer can be an aluminium nitride layer; the metal-group (III)-nitride layer can be an aluminium gallium nitride layer; and the group (III)-nitride layer can be a gallium nitride layer. |
| 申请公布号 |
US2015357451(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201314758035 |
申请日期 |
2013.12.23 |
| 申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
Manippady Krishna Kumar;Bin Dolmananh Surani;Lin Kaixin Vivian;Tan Hui Ru;Tripathy Sudhiranjan |
| 分类号 |
H01L29/778;H01L29/66;H01L29/20;H01L21/02 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a substrate; a group(III)-nitride layer; a metal-group(III)-nitride layer deposited between the substrate and group(III)-nitride layer; and a metal nitride layer deposited between the substrate and the metal-group(III)-nitride layer. |
| 地址 |
Singapore SG |
