NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING NONVOLATILE MEMORY DEVICE

摘要

A non-volatile memory device includes a first word line, a second word line, first memory cells, second memory cells, and an address decoder. The second word line is adjacent to the first word line. The first memory cells are connected to the first word line. The second memory cells are connected to the second word line and to the respective first memory cells. The address decoder applies a first voltage higher than a program voltage of the first and second memory cells to the first word line in an over-program section of the first memory cells and applies a second voltage lower than a pass voltage of the first and second memory cells to the second word line.