发明名称 A method of forming thick resist pattern and a photosensitive resin composition used in the method
摘要 A radiation sensitive resin composition for forming a thick film resist pattern comprises an alkali-soluble resin and a photosensitizer containing a quinone diazide group, wherein the alkali-soluble resin is a mixture of a novolak resin and one or more resins selected from the group consisting of (i) a polyacrylate, (ii) a polymethacrylate, (iii) a polystyrene derivative, and (iv) a copolymer comprising two or more monomer units selected from the group of an acrylate, a methacrylate and a styrene derivative. The composition is applied on a substrate to form a 2.0 mu m or more of resist film in thickness. The resist film is exposed to light and developed to form a thick film resist pattern. The radiation sensitive resin composition may contain a low-molecular or high-molecular compound having phenolic hydroxyl group or groups as a dissolution promoter or a sensitivity improving agent, a fluorescent material as a sensitizer, etc. <IMAGE>
申请公布号 KR100894802(B1) 申请公布日期 2009.04.24
申请号 KR20037016299 申请日期 2003.12.12
申请人 发明人
分类号 G03F7/022;(IPC1-7):G03F7/022 主分类号 G03F7/022
代理机构 代理人
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