| 摘要 |
A method of forming an electrical contact, comprising depositing, on a surface of a group IV semiconductor, which has been prepared so as to include atoms of a first group V material near the surface, a monolayer of a second group V material, the atoms of the second group V material being epitaxially aligned with a lattice structure of the semiconductor, and depositing a metal on the monolayer of the second group V material. This results in the specific contact resistance of the metal being reduced. In one embodiment the metal may be a ferromagnetic metal. The application further discloses the use of III-V bi layers as well as group III monolayers. |
