| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a semiconductor light emitting element in which the amount of diffusion of Zn from a p-type contact layer to a p-type cladding layer and an active layer can be controlled, and to provide a semiconductor light emitting element fabricated employing the epitaxial wafer for the semiconductor light emitting element. <P>SOLUTION: The epitaxial wafer for the semiconductor light emitting device is provided in which at least an n-type cladding layer (4) formed with a mixed crystal made of an AlGaInP-based material, the active layer (6), a p-type Mg-doped cladding layer, and a p-type contact layer (13) are stacked successively in that order on an n-type GaAs substrate (1), and the p-type contact layer (13) is formed as at least two layers that are an Mg-doped contact layer (13b) and a Zn-doped contact layer (13a) stacked thereon from a side of the n-type GaAs substrate (1), wherein the epitaxial wafer includes a Zn-doped layer (11) which is inserted between the p-type Mg-doped cladding layer (8, 10) and the p-type contact layer (13). <P>COPYRIGHT: (C)2009,JPO&INPIT |
