NITRIDE CRYSTAL SUBSTRATE, NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride crystal substrate having a crystal surface layer directly and surely evaluated so as to suitably be used as a substrate for a semiconductor device without damaging the crystal, a nitride crystal substrate with an epitaxial layer and a semiconductor device.

SOLUTION: The nitride crystal substrate is constituted of a nitride crystal and has a diameter of 50 mm. Wherein the crystal is characterized by having ≥0.3×10-3and ≤2.1×10-3uniform distortion of the surface layer of the crystal, expressed by the value of ¾d1-d2¾/d2obtained from d1of a plane space at an X-ray penetration depth of 0.3 μm and d2of a plane space at an X-ray penetration depth of 5 μm in the plane space of a specific crystal lattice plane obtained by X-ray diffraction measurement of varying the X-ray penetration depth from the surface of a crystal while satisfying X-ray diffraction conditions for an arbitrary specific crystal lattice plane of the nitride crystal.

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