发明名称 Light-emitting diode and method of fabricating the same
摘要 <p>An LED in accordance with the present invention includes a semiconductor stack structure configured to include a first semiconductor layer, an active layer, and a second semiconductor layer over a substrate, a conductive substrate formed over the semiconductor stack structure, and an electrode formed over the conductive substrate and subject to ohmic contact with the conductive substrate, wherein the electrode comprises laser grooves formed to penetrate from the electrode to part of the conductive substrate by performing laser scribing on the electrode and the conductive substrate. Accordingly, the electrode can be subject to ohmic contact because heat can be locally transferred using a laser. Accordingly, there are advantages in that an operating voltage can be lowered and the amount of heat generated can be reduced.</p>
申请公布号 EP2743997(A3) 申请公布日期 2015.12.09
申请号 EP20130196919 申请日期 2013.12.12
申请人 SEOUL VIOSYS CO., LTD. 发明人 LEE, JIN WOONG;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, YE SEUL;KIM, TAE KYOON
分类号 H01L33/38;H01L23/00;H01L33/00;H01L33/20;H01L33/42;H01L33/46 主分类号 H01L33/38
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