| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench gate electrode with an ultra-low on-resistance, and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes: a substrate having a first conductivity type and including a body region having the first conductivity type opposed to a second conductivity type, a source region formed in the body region, a drift region adjacent to the body region and having the second conductivity type, and a drain region formed in the drift region; a trench formed between the body region and the drift region; a gate dielectric layer arranged adjacently to the trench; a liner lining the trench and contacted with the gate dielectric layer; and a gate electrode formed on the gate dielectric layer and extending in the trench.</p> |
