CARBON FILM LAMINATE

摘要

An object of the present invention is to solve a problem such as a small crystal size, which is the issue of a conventional method for formation of a film of graphene by a thermal CVD technique using a copper foil as a substrate, and thus providing a carbon film laminate in which graphene having a larger crystal size is formed. The carbon film laminate is configured to include a sapphire (0001) single crystal having a surface composed of terrace surfaces which are flat at the atomic level, and atomic-layer steps, a copper (111) single crystal thin film formed by epitaxial growth on the substrate, and graphene deposited on the copper (111) single crystal thin film, and thus enabling formation of graphene having a large crystal size.