CHEMICAL MECHANICAL POLISHING SLURRY FOR REDUCING CORROSION AND METHOD OF USE THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide chemical mechanical planarization (CMP) slurries and associated methods for tungsten polishing that realize high tungsten removal rates and low tungsten static etch rates.SOLUTION: A tungsten chemical mechanical planarization (CMP) slurry comprises: 0.0 to 30 wt.% abrasive; 0.01 to 5 wt.% activator-containing particles; peroxygen oxidizer; 0 to 10 wt.% pH adjustor; and the remaining being water. The tungsten CMP slurry has a pH in the range from 4 to 10.SELECTED DRAWING: None