| 摘要 |
A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer , a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer , the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device. Through such setting, the heat of the transistor can be conducted and emitted fast, so that the reliability of power amplifier tubes and the components nearby is increased, the performance index of power amplifiers at a high temperature is greatly improved, moreover, the service life of devices is prolonged and the competitiveness is improved. |
