Substrate temperature control method and plasma processing apparatus

摘要

Provided are a substrate temperature control method and a plasma processing apparatus using the method. The method includes: disposing a substrate on a placing table provided in a vacuum processing chamber; supplying a heat conduction gas between a rear surface of the substrate and the placing table; detecting a pressure of the heat conduction gas; comparing the detected pressure value with a set pressure value; controlling the supply of the heat conduction gas so that the detected pressure value becomes the set pressure value; and alternately repeating a first period where the set pressure value is set to be a first set pressure value that is higher than a low pressure value and equal to or higher than the lowest limit pressure value and a second period where the set pressure value is set to be a second set pressure value that is lower than the low pressure value.

主权项

1. A substrate temperature control method comprising:
disposing a substrate on a substrate disposing surface of a placing table provided in a vacuum processing chamber, the placing table being configured to be cooled or heated; supplying a heat conduction gas between a rear surface of the substrate and the substrate disposing surface of the placing table to control a temperature of the substrate; detecting a pressure of the heat conduction gas; comparing the detected pressure value with a set pressure value; controlling the supply of the heat conduction gas so that the detected pressure value becomes the set pressure value; and when the pressure of the heat conduction gas is set to a low pressure value that is lower than a predetermined lowest limit pressure value and the temperature of the substrate is controlled by suppressing the heat exchange between the substrate and the placing table, alternately repeating a first period where the set pressure value is set to be a first set pressure value that is higher than the low pressure value and equal to or higher than the predetermined lowest limit pressure value and a second period where the set pressure value is set to be a second set pressure value that is lower than the low pressure value, wherein the predetermined lowest limit pressure value is a minimum value for the heat exchange between the substrate and the placing table using the heat conduction gas.