Conductivity based on selective etch for GaN devices and applications thereof

摘要

This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

主权项

1. A method for forming porous GaN, comprising:
exposing GaN to an electrolyte; coupling the GaN to one terminal of a power supply and coupling an electrode immersed in the electrolyte to another terminal of the power supply to thereby form a circuit; and energizing the circuit to electrochemically (EC) etch a plurality of pores in at least a first portion of the GaN and thereby form porous GaN, wherein electrochemically etching the plurality of pores does not require ultraviolet illumination of the GaN.