Semiconductor device and manufacturing method thereof

摘要

A method of manufacturing a WLP semiconductor structure includes several operations. One of the operations is providing a carrier and the carrier includes a top surface. One of the operations is covering a portion of the top surface with a plurality of active dies. One of the operations is disposing a protrudent band on a periphery of the carrier, wherein the protrudent band includes a rim shaped along the contour of the carrier. One of the operations is forming a molding compound on the carrier to cover the plurality of active dies.

主权项

1. A method of manufacturing a device, comprising:
providing a carrier including a top surface; covering a portion of the top surface with a plurality of active dies; covering a central region of the carrier with a molding compound, wherein a first portion of the plurality of active dies are under the molding compound; and covering a periphery of the carrier with a periphery molding compound over a peripheral region of the carrier, the periphery molding compound has a CTE differing from a CTE of the molding compound, and wherein a second portion of the plurality of active dies are under the periphery molding compound, wherein the first portion of the plurality of active dies is a first predetermined set of the plurality of the active dies, and the second portion of the plurality of active dies is a second predetermined set of the plurality of the active dies other than the first predetermined set of the plurality of the active dies.