发明名称 Method for obtaining field strength information
摘要 A method includes generating an input voltage for an operational amplifier from a received electromagnetic signal in a receiver unit by an input resistance and generating an output voltage by the operational amplifier by a fixed amplification factor. The input voltage is changed until the output voltage lies within a predefined interval that includes the value of the reference voltage. The input voltage is tapped at a divider node of a voltage divider. The gate voltage of the MOS transistor, operating within a nonlinear range and connected to the divider node, is changed to adjust the output voltage to the reference voltage such that a forward resistance of the transistor is changed nonlinearly. A field strength value received by the receiver unit is determined from a comparison of the value of the present gate voltage with quantities assigned to stored gate voltage values.
申请公布号 US9209759(B2) 申请公布日期 2015.12.08
申请号 US201213548961 申请日期 2012.07.13
申请人 Atmel Corporation 发明人 Moser Helmut;Moser Daniel
分类号 G01R29/08;H03F3/193 主分类号 G01R29/08
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A method for obtaining field strength information, comprising: storing, in a memory, an association between field strength values and predefined gate voltages; applying, by an input resistance element, a resistance value to an input signal to generate an input voltage; amplifying the input voltage by an operational amplifier to generate an output voltage; determining, by a control element, that the output voltage is outside a voltage interval associated with a reference voltage; in response to determining that the output voltage is outside the voltage interval, changing a gate voltage applied to the input resistance element to adjust the resistance value applied to the input signal in a non-linear manner to result in an adjusted output voltage by the operational amplifier; and in response to determining that the adjusted output voltage is within the voltage interval, determining, from a table, a field strength of the input signal based on the gate value applied to the input resistance element and a stored association between the field strength values and the predefined gate voltages.
地址 San Jose CA US