Method of making a die with recessed aluminum die pads

摘要

A method for making a semiconductor device comprises forming an electrical interconnect layer, forming a first dielectric layer over the interconnect layer, forming an opening in the first dielectric layer over a first electrical interconnect of the interconnect layer, forming an aluminum layer over the first dielectric layer, etching the aluminum layer to form an aluminum die pad, forming a second dielectric layer over the aluminum die pad and the first dielectric layer, and forming a conductive via through the first and second dielectric layers to contact a second electrical interconnect of the interconnect layer.

主权项

1. A method for making a semiconductor device comprising:
forming an electrical interconnect layer; forming a first dielectric layer over the electrical interconnect layer; forming an opening in the first dielectric layer over a first interconnect of the electrical interconnect layer; forming an aluminum layer over the opening and the first dielectric layer; patterning the aluminum layer to form an aluminum die pad electrically coupled to the first interconnect of the electrical interconnect layer; forming a second dielectric layer with a planar surface over the aluminum die pad and the first dielectric layer, wherein the planar surface is at least 0.1 micron above a top surface of the aluminum die pad; forming a conductive via through the first dielectric layer and the second dielectric layer to electrically contact a second interconnect of the electrical interconnect layer; after forming the conductive via, forming an opening in the second dielectric layer to expose at least a portion of the aluminum die pad, wherein the top surface of the aluminum die pad is at a level that is below a top surface of the conductive via.