Growing III-V compound semiconductors from trenches filled with intermediate layers

摘要

A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.

主权项

1. A method comprising:
forming an insulation layer extending into a substrate, with portions of the substrate in, and separate from each other by, portions of the insulation layer; removing the portions of the substrate to form recesses in the insulation layer; epitaxially growing a semiconductor material in the recesses; performing a planarization to remove excess portions of the semiconductor material, with remaining portions of the semiconductor material in the recesses; etching the remaining portions to form V-grooves; and epitaxially growing a III-V compound semiconductor film starting from the V-grooves.