Silicon-based tunneling field effect transistors and transistor circuitry employing same

摘要

A p-channel tunneling field effect transistor (TFET) is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The p-channel TFET includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary III-V alloy. An n-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The n-channel TFET includes an n-type region, a p-type region with a p-type delta doping, and a channel region disposed between and spacing apart the n-type region and the p-type region. The p-channel TFET and the n-channel TFET may be electrically connected to define a complementary field-effect transistor element. TFETs may be fabricated from a silicon-germanium TFET layer structure grown by low temperature (500 degrees Centigrade) molecular beam epitaxy.

主权项

1. An electronic device or circuit comprising:
a p-channel tunneling field-effect transistor (p-channel TFET) comprising a multi-layer structure including:
an n-type source region,a p-type drain region,a channel region disposed between and spacing apart the n-type source region and the p-type drain region, anda conduction band quantum well at an interface between the n-type source region and the channel region; wherein the p-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers includes with the channel region comprising a silicon-germanium alloy with non-zero germanium content and (ii) a multi-layer structure of group III-V layers with the channel region comprising a ternary III-V alloy.