| 发明名称 | Oxide sintered body and sputtering target | ||
| 摘要 | An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure. | ||
| 申请公布号 | US9209257(B2) | 申请公布日期 | 2015.12.08 |
| 申请号 | US201314085199 | 申请日期 | 2013.11.20 |
| 申请人 | Idemitsu Kosan Co., Ltd. | 发明人 | Utsuno Futoshi;Inoue Kazuyoshi;Kawashima Hirokazu;Kasami Masashi;Yano Koki;Terai Kota |
| 分类号 | H01B1/02;H01B1/08;H01L29/24;C04B35/01;C04B35/626;C04B35/645;C23C14/08;C23C14/34;H01L21/02;H01L29/786 | 主分类号 | H01B1/02 |
| 代理机构 | Millen, White, Zelano & Branigan, P.C. | 代理人 | Millen, White, Zelano & Branigan, P.C. |
| 主权项 | 1. An oxide thin film comprising indium oxide and gallium solid-solved therein, the oxide thin film having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.08, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure, wherein the oxide thin film comprises gallium, indium and oxygen optionally scandium, yttrium, aluminum, or impurities, with the proviso that the oxide thin film does not comprise any components other than gallium, indium, scandium, yttrium, aluminum, oxygen and impurities, and wherein the bixbyite structure has a lattice constant of 10.01 Å or more and less than 10.118 Å. | ||
| 地址 | Tokyo JP | ||