| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming on a substrate a chalcogenide layer containing at least two metallic elements and Se.SOLUTION: The method comprises: depositing on the substrate a metallic layer containing the at least two metallic elements 101; and annealing the metallic layer in an atmosphere comprising both a S-containing vapor such as HS vapor and a Se-containing vapor such as HSe vapor, thereby forming the chalcogenide layer 102. The annealing is done, e.g., at a temperature in the range from 450°C to 550°C, resulting in a layer with good morphological quality and large grain size, the layer being free of S. The method is used, e.g., for forming an absorber layer of a photovoltaic cell. |
