SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To increase carrier life time.SOLUTION: A semiconductor device manufacturing method includes: a process of forming a semiconductor layer 12 containing barium silicide on a substrate 10; and a process of forming a barium layer or a silicon layer 14 on the semiconductor layer 12 without exposing a surface of the semiconductor layer 12 in an oxidation atmosphere. A semiconductor device comprises: a semiconductor layer 12 including a barium silicide formed on a substrate 10; and a surface layer 14 which is formed on the semiconductor layer 12, and has an atom ratio of barium against barium and silicon, which is larger than the atom ratio in the semiconductor layer and includes barium oxide (or has an atom ratio of silicon against barium and silicon, which is larger than the atom ratio in the semiconductor layer and includes silicon oxide).