| 摘要 |
PROBLEM TO BE SOLVED: To avoid possibilities of an increase in parasitic resistance of a diffusion layer to deteriorate performance of a transistor, which is caused by refinement of a vertical transistor.SOLUTION: A semiconductor device comprises: a plurality of semiconductor pillars arranged on a semiconductor substrate along a first direction; a lower diffusion layer formed on the semiconductor substrate in a region around the plurality of semiconductor pillars; gate electrodes formed on side wall surfaces of the plurality of semiconductor pillars in sidewall-like shapes via gate insulation films; a plurality of upper diffusion layers formed on upper parts of the plurality of semiconductor pillars; and first contacts which are arranged away from the plurality of semiconductor pillars in a second direction and connected to the lower diffusion layers. The lower diffusion layer is also arranged in regions among the plurality of semiconductor pillars which are adjacent to each other in the first direction. The gate electrodes are connected in regions among the semiconductor pillars which are adjacent to each other in the first direction. |
