ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION

摘要

Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

主权项

1. A method for fabricating a device, comprising:
treating a surface of one or more substrates in a first processing chamber; transferring the one or more substrates from the first processing chamber to a second processing chamber in a controlled environment; and forming an aluminum-nitride layer on the one or more substrates in a second processing chamber that has one or more walls that define a processing region, wherein forming the aluminum-nitride layer comprises:
biasing a target that has a surface that is in contact with the processing region, wherein the target comprises aluminum;flowing a first gas that comprises nitrogen into the processing region; andflowing a second gas into the processing region, wherein the second gas comprises argon, krypton or neon, andwherein biasing the target is configured to promote N-face growth of the aluminum-nitride layer on the one or more substrates.