| 摘要 |
PROBLEM TO BE SOLVED: To carry out etching in a more simple way.SOLUTION: An etching method of the present invention includes: a protective film formation step of forming a protective film 3 only in a non-etching region A1; and an etching step of, after carrying out the protective film formation step, etching a wafer W to etch an etching region A2 of the wafer W. In the protective film formation step, as a liquid protective film agent 2 in a form of minute droplets is sprayed to at least a part of the non-etching region A1 to form the protective film 3, the use amount of the protective film agent can be suppressed. Thereby, facilities are unnecessary, such as an application device for applying a resist, an exposure device and an exposure mask for transferring a mask pattern, and a developing device for developing. Further, a developer and a developing time, which can simplify an etching processing step and reduce process time and costs. |
