| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate with a conductive film for an EUV (Extreme Ultra Violet) mask blank, which substrate has a conductive film having low sheet resistance and excellent surface smoothness.SOLUTION: The substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography is provided in which a conductive film 2 has at least two layers of a lower layer 21 formed on a substrate 1 side and an upper layer 22 formed on the lower layer 21; the lower layer 21 of the conductive film 2 is a CrN-based film which contains Cr and N; the upper layer 22 of the conductive film 2 is a CrON-based film which contains Cr, N and O; in the CrN-based film, the total content of Cr and N is 85% or more, and the compositional ratio (atomic ratio) of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON-based film, the total content of Cr, N and O is 85% or more, and the compositional ratio (atomic ratio) of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON-based film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON-based film is 0.18 nm or less. |
