发明名称 Lithographic Method and Apparatus
摘要 A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.
申请公布号 US2015346606(A1) 申请公布日期 2015.12.03
申请号 US201514825771 申请日期 2015.08.13
申请人 ASML Netherlands B.V. 发明人 BASELMANS Johannes Jacobus Matheus;JASPER Johannes Christiaan Maria
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A lithographic apparatus comprising: an illumination system configured to provide a beam of radiation; a support structure configured to support patterning device, the patterning device serving to impart the radiation beam with a pattern in its cross-section; a substrate table configured to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate; a controller configured to operate the lithographic apparatus.
地址 Veldhoven NL