METHODS OF FORMING MIS CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES

摘要

One method disclosed includes, among other things, conformably depositing a layer of contact insulating material and a conductive material layer in a contact opening, forming a reduced-thickness sacrificial material layer in the contact opening so as to expose a portion, but not all, of the conductive material layer, removing portions of the conductive material layer and the layer of contact insulating material positioned above the upper surface of the reduced-thickness sacrificial material layer, removing the reduced-thickness sacrificial material layer, and forming a conductive contact in the contact opening that contacts the recessed portions of the conductive material layer and the layer of contact insulating material.

主权项

1. A method of forming an MIS contact structure, comprising:
forming at least one layer of insulating material above a semiconductor layer; performing at least one contact opening etching process to form a contact opening in said at least one layer of insulating material that exposes a portion of said semiconductor layer; conformably depositing a layer of contact insulating material in said contact opening and on the exposed surface of said semiconductor layer; conformably depositing a conductive material layer on said layer of contact insulating material within said contact opening; forming a sacrificial material layer in said contact opening on said conductive material layer such that it overfills said contact opening; reducing a thickness of said sacrificial material layer so as to expose a portion, but not all, of said conductive material layer, wherein said reduced-thickness sacrificial material layer has an upper surface; performing at least one etching process to remove portions of said conductive material layer and said layer of contact insulating material positioned above said upper surface of said reduced-thickness sacrificial material layer so as to thereby define recessed portions of said conductive material layer and said layer of contact insulating material; removing said reduced-thickness sacrificial material layer; and forming a conductive contact in said contact opening that contacts said recessed portions of said conductive material layer and said layer of contact insulating material.