发明名称 PLANAR METROLOGY PAD ADJACENT A SET OF FINS IN A FIN FIELD EFFECT TRANSISTOR DEVICE
摘要 Approaches for providing a planar metrology pad adjacent a set of fins of a fin field effect transistor (FinFET) device are disclosed. A previously deposited amorphous carbon layer can be removed from over a mandrel that has been previously formed on a subset of a substrate, such as using a photoresist. A pad hardmask can be formed over the mandrel on the subset of the substrate. This formation results in the subset of the substrate having the pad hardmask covering the mandrel thereon and the remainder of the substrate having the amorphous carbon layer covering the mandrel thereon. This amorphous carbon layer can be removed from over the mandrel on the remainder of the substrate, allowing a set of fins to be formed therein while the amorphous carbon layer keeps the set of fins from being formed in the portion of the substrate that it covers.
申请公布号 US2015348913(A1) 申请公布日期 2015.12.03
申请号 US201514818039 申请日期 2015.08.04
申请人 Globalfoundries Inc. 发明人 Hu Xiang;Subramany Lokesh;Vaid Alok;Gu Sipeng;Sehgal Akshey
分类号 H01L23/544;H01L29/06;H01L29/16;H01L29/78 主分类号 H01L23/544
代理机构 代理人
主权项
地址 Grand Cayman KY
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