发明名称 |
RESISTIVE RANDOM-ACCESS MEMORY (RRAM) WITH A LOW-K POROUS LAYER |
摘要 |
A resistive memory cell is disclosed. The resistive memory cell comprises a pair of electrodes and a resistance-switching network disposed between the pair of electrodes. The resistance-switching network comprises a group-IV element doping layer and a porous low-k layer. The group-IV doping layer comprises silicon oxide doped with a group-IV element. The porous low-k layer comprises porous silicon oxide or porous hafnium oxide. The group-IV element may comprise zirconium, titanium, or hafnium. The porous low-k layer may be prepared by inductively coupled plasma (ICP) treatment. A method of fabricating a resistive memory is disclosed. The method comprises forming a resistance-switching network on a first electrode using sputtering and forming a second electrode on the resistance-switching network using sputtering. The resistance-switching network comprises a group-IV element doping layer and a porous low-k layer. |
申请公布号 |
US2015349251(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201414288688 |
申请日期 |
2014.05.28 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
CHANG TING-CHANG;CHANG KUAN-CHANG;TSAI TSUNG-MING;PAN CHIH-HUNG;WANG YING-LANG;CHEN KEI-WEI;CHANG SHIH-CHIEH;KUNG TE-MING |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |