ELECTRIC POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF ELECTRIC POWER SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an electric power semiconductor device capable of handling a high temperature while satisfying both of the yield and the reliability.SOLUTION: An electric power semiconductor device 1 includes: an electric power semiconductor element 2; and a circuit base plate 3 to which the electric power semiconductor element 2 is bonded via a metal sintered body (joint part 4). The metal sintered body (joint part 4) is arranged so that the voidage &egr;e in a part (area Re) closer to the side part 2 s of the electric power semiconductor element 2 is smaller than the voidage &egr;c in a part (area Rc) closer to the center.