发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics and a structure suitable for high integration.SOLUTION: A semiconductor device comprises: a semiconductor substrate 10 including a first conductivity type region (N type region) 11 and a second conductivity type region (P well) 12; a signal line 30 provided on the substrate; a semiconductor element (P type MOST) 20 formed on the first conductivity type region; first wiring 41 connecting the semiconductor element and the signal line; and second wiring 42 connecting the first wiring and the second conductivity type region. |
申请公布号 |
JP2015216194(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20140097403 |
申请日期 |
2014.05.09 |
申请人 |
SONY CORP |
发明人 |
KAJIYA YOSHIHIKO |
分类号 |
H01L21/822;H01L21/336;H01L27/04;H01L27/06;H01L29/78;H01L29/861;H01L29/868 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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