发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics and a structure suitable for high integration.SOLUTION: A semiconductor device comprises: a semiconductor substrate 10 including a first conductivity type region (N type region) 11 and a second conductivity type region (P well) 12; a signal line 30 provided on the substrate; a semiconductor element (P type MOST) 20 formed on the first conductivity type region; first wiring 41 connecting the semiconductor element and the signal line; and second wiring 42 connecting the first wiring and the second conductivity type region.
申请公布号 JP2015216194(A) 申请公布日期 2015.12.03
申请号 JP20140097403 申请日期 2014.05.09
申请人 SONY CORP 发明人 KAJIYA YOSHIHIKO
分类号 H01L21/822;H01L21/336;H01L27/04;H01L27/06;H01L29/78;H01L29/861;H01L29/868 主分类号 H01L21/822
代理机构 代理人
主权项
地址