SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF MAKING THE SAME

摘要

The present disclosure relates to a semiconductor substrate, a semiconductor package structure, and methods for making the same. A method includes providing a substrate and a carrier layer. The substrate includes a first patterned metal layer, a second patterned metal layer spaced from the first patterned metal layer, and a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer. The dielectric layer covers the second patterned metal layer. The dielectric layer defines first openings exposing the second patterned metal layer, and further defines a via opening extending from the first patterned metal layer to the second patterned metal layer. A conductive material is disposed in the via and electrically connects the first patterned metal layer to the second patterned metal layer. The carrier layer defines second openings exposing the second patterned metal layer.

主权项

1. A method of making a semiconductor substrate, comprising:
providing a substrate, the substrate comprising:
a first patterned metal layer;a second patterned metal layer spaced from the first patterned metal layer;a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer and covering the second patterned metal layer, wherein the dielectric layer defines first openings exposing the second patterned metal layer, and the dielectric layer further defines a via opening extending from the first patterned metal layer to the second patterned metal layer; anda conductive material disposed in the via opening and electrically connecting the first patterned metal layer to the second patterned metal layer; and providing a carrier layer on the dielectric layer, wherein the carrier layer defines second openings exposing the second patterned metal layer.