Nanocrystalline Diamond Three-Dimensional Films in Patterned Semiconductor Substrates

摘要

An array of through-silicon vias (TSVs) are formed in a silicone substrate. The vias can be tapered such that the diameter of the via at the surface of the substrate is larger than the diameter of the via at its bottom, with the diameter varying continuously along its depth. After the via is formed, it is seeded with a thin layer of nanocrystalline diamond (NCD) particles, and a NCD film is grown on the bottom and along the sidewalls of the via. The presence of the diamond-filled vias provides improved thermal management to semiconductor devices formed on the silicon substrate.

主权项

1. A nanocrystalline diamond-impregnated silicon substrate, comprising:
a plurality of through-silicon vias formed in the substrate, each of the through-silicon vias having a sidewall extending into the silicon substrate and a top edge at the surface of the silicon substrate; wherein at least some of the through-silicon vias have a nanocrystalline diamond (NCD) coating on the sidewalls thereof; and wherein the NCD-coated through-silicon vias are arranged in a predetermined pattern in the substrate.