Ion Implantation to Alter Etch Rate

摘要

Implanting a material in a pattern hardens the material in the pattern for subsequent etching. When the region is etched, by ion beam sputtering, chemically enhanced charged particle beam etching, or chemical etching, a thicker structure remains because of the reduced etch rate of the hardened pattern. The invention is particularly useful for the preparation of thin lamella for viewing on a transmission electron microscope.

主权项

1. A method for preparing a thin, reinforced lamellar structure using a charged particle beam systems, comprising:
partly forming a lamella from a sample material; applying a hardening material in a pattern to the lamella; and milling the lamella, the region of the lamella with the hardening material being milled at a slower rate than the region of the lamella without the hardening material, leaving at least one raised structure where the hardening material was applied to mechanically strengthen the lamella.