发明名称 |
Semiconductor Device and Electronic Device |
摘要 |
A semiconductor device that is hardly broken is provided. Alternatively, a semiconductor device having high reliability is provided. The semiconductor device includes a first circuit, a second circuit, a first wiring, a second wiring, and a third wiring. The second circuit has a function of protecting the first circuit. The second circuit includes a first transistor including an oxide semiconductor film. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring is electrically connected to the first circuit through the second circuit. The first wiring has a function of inputting a signal. The second wiring is electrically connected to the first circuit. The second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor. The third wiring is electrically connected to a gate electrode of the first transistor included in the second circuit. |
申请公布号 |
US2015348961(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514724398 |
申请日期 |
2015.05.28 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Isobe Atsuo |
分类号 |
H01L27/02;H01L23/528;H01L27/12;H01L29/786 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a first circuit; a second circuit; a first wiring; a second wiring; a third wiring: and a fourth wiring; wherein the first circuit includes a plurality of transistors, wherein the second circuit has a function of protecting the first circuit, wherein the second circuit comprises:
a first transistor,a first diode,a second diode, anda first resistor, wherein the first wiring is electrically connected to the first circuit via the second circuit, wherein the first wiring is has a function of inputting a signal, wherein the second wiring is electrically connected to the first circuit, wherein the second wiring is electrically connected to one of a source electrode and a drain electrode of the first transistor, wherein the third wiring is electrically connected to a gate electrode of the first transistor, wherein the fourth wiring is electrically connected to the other of the source electrode and the drain electrode of the first transistor, wherein the first transistor includes an oxide semiconductor film. |
地址 |
Kanagawa-ken JP |