SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE

摘要

Provided is a semiconductor device that occupies a small area, a highly integrated semiconductor device, or a semiconductor device with high productivity. To fabricate an integrated circuit, a first insulating film is formed over a p-channel transistor; a transistor including an oxide semiconductor is formed over the first insulating film; a second insulating film is formed over the transistor; an opening, that is, a contact hole part of a sidewall of which is formed of the oxide semiconductor of the transistor, is formed in the first insulating film and the second insulating film; and an electrode connecting the p-channel transistor and the transistor including an oxide semiconductor to each other is formed.

主权项

1. A semiconductor device comprising:
a transistor; an insulating film over the transistor, having an opening portion that overlaps with the transistor; and a first conductive film provided in the opening portion, electrically connected to the transistor, wherein a side surface of the first conductive film has a plurality of projections in a cross section in a thickness direction.