| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure which can more reliably detect extraordinary heat generation generated at the semiconductor device.SOLUTION: A semiconductor device 2 comprises: a semiconductor element 10; a pair of signal pads 12, 14; and temperature detection diodes D1-D5. The temperature detection diodes D1-D5 are connected in parallel between the pair of signal pads 12, 14. Because of this, when a certain voltage is applied between the pair of signal pads 12, 14, currents I1-I5 each corresponding to a temperature near each of the temperature detection diodes D1-D5 flow in the respective temperature detection diodes D1-D5. Accordingly, a current I flowing between the pair of signal pads 12, 14 is a sum of the currents I1-I5 having flown in the respective temperature detection diodes D1-D5. |
