| 摘要 |
<p>The application discloses a semiconductor storage device (100, 200, 300) comprising a semiconductor substrate (112) having a first region of a first conductivity type in between respective regions of an opposite conductivity type, at least the first region being covered by a first dielectric layer, a polysilicon floating gate (122) placed on the first dielectric layer over the first region, said floating gate being surrounded by an insulating material (124); and a metal control gate structure (126, 226, 326) adjacent to the polysilicon floating gate, the metal control gate structure being capacitively coupled to said floating gate. The application further discloses a method of manufacturing such a semiconductor storage device (100, 200, 300).</p> |
