发明名称 |
Ultrafiltration membranes fabricated from sulfonated polyphenylenesulfones |
摘要 |
The present invention is directed to ultrafiltration membranes comprising a membrane substrate layer (S) based on a sulfonated polyaryleneethersulfone polymer and to a method for their preparation. Furthermore, the present invention is directed to ultrafiltration processes making use of said membrane. |
申请公布号 |
US9199205(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201313866529 |
申请日期 |
2013.04.19 |
申请人 |
BASF SE;National University of Singapore |
发明人 |
Weber Martin;Maletzko Christian;Widjojo Natalia;Zhong Peishan;Chung Tai-Shung |
分类号 |
C08G75/00;B01D71/68;B01D67/00;B01D71/82;B01D61/14 |
主分类号 |
C08G75/00 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. An ultrafiltration membrane consisting of at least one membrane substrate layer (S) that represents a sponge-like and macrovoid-free structure and comprises as the single membrane forming polymeric material at least one partially sulfonated polyethersulfone polymer (P1), wherein said polymer (P1) comprises non-sulfonated and sulfonated repeating units and wherein in said partially sulfonated polyethersulfone polymer (P1) about 0.5 to 4.5 mole-% of the monomeric constituents or repeating units of the polymer carry at least one sulfonate group, wherein said partially sulfonated polyethersulfone polymer (P1) is a polyaryleneethersulfone polymer and its repeating units are composed of monomeric units of the general formulae
O—Ar (M2) wherein Ar represents a divalent arylene residue, at least one monomeric unit selected from 1 and M2 is sulphonated and the aromatic rings as contained in M1 and M2 optionally and independently of each other is optionally further substituted; and wherein said partially sulfonated polyethersulfone polymer (P1) is obtained by polymerizing monomers of the general formulae M1a and M2a
HO—Ar—OH (M2a) wherein Ar represents a divalent arylene residue, and Hal is F, Cl, Br or I and at least one sulphonated monomer of the general foimulae M1b and M2b wherein Hal and Ar are as defined above, and n and m independently are 0, 1 or 2, provided that n and m are not simultaneously 0, wherein the substrate layer (s) has a layer thickness in the range of 30-400 μm. |
地址 |
Ludwigshafen DE |