发明名称 Ultrafiltration membranes fabricated from sulfonated polyphenylenesulfones
摘要 The present invention is directed to ultrafiltration membranes comprising a membrane substrate layer (S) based on a sulfonated polyaryleneethersulfone polymer and to a method for their preparation. Furthermore, the present invention is directed to ultrafiltration processes making use of said membrane.
申请公布号 US9199205(B2) 申请公布日期 2015.12.01
申请号 US201313866529 申请日期 2013.04.19
申请人 BASF SE;National University of Singapore 发明人 Weber Martin;Maletzko Christian;Widjojo Natalia;Zhong Peishan;Chung Tai-Shung
分类号 C08G75/00;B01D71/68;B01D67/00;B01D71/82;B01D61/14 主分类号 C08G75/00
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. An ultrafiltration membrane consisting of at least one membrane substrate layer (S) that represents a sponge-like and macrovoid-free structure and comprises as the single membrane forming polymeric material at least one partially sulfonated polyethersulfone polymer (P1), wherein said polymer (P1) comprises non-sulfonated and sulfonated repeating units and wherein in said partially sulfonated polyethersulfone polymer (P1) about 0.5 to 4.5 mole-% of the monomeric constituents or repeating units of the polymer carry at least one sulfonate group, wherein said partially sulfonated polyethersulfone polymer (P1) is a polyaryleneethersulfone polymer and its repeating units are composed of monomeric units of the general formulae O—Ar  (M2) wherein Ar represents a divalent arylene residue, at least one monomeric unit selected from 1 and M2 is sulphonated and the aromatic rings as contained in M1 and M2 optionally and independently of each other is optionally further substituted; and wherein said partially sulfonated polyethersulfone polymer (P1) is obtained by polymerizing monomers of the general formulae M1a and M2a HO—Ar—OH  (M2a) wherein Ar represents a divalent arylene residue, and Hal is F, Cl, Br or I and at least one sulphonated monomer of the general foimulae M1b and M2b wherein Hal and Ar are as defined above, and n and m independently are 0, 1 or 2, provided that n and m are not simultaneously 0, wherein the substrate layer (s) has a layer thickness in the range of 30-400 μm.
地址 Ludwigshafen DE