| 摘要 |
A method for manufacturing a GaN wafer may include: a step of growing a GaN layer on a substrate where a SiC layer is formed on a Si layer, while maintaining the inner temperature of a reactor at a first temperature; a step of reducing the internal stress of the GaN layer, the SiC layer, and the Si layer by changing the inner temperature of the reactor into a second temperature; a step of etching the Si layer by injecting an etching material into the reactor; and a step of manufacturing the GaN wafer by removing the SiC layer after the SiC and GaN layers are cooled. |
