Semiconductor device

摘要

A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m−1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m−1)-th scan line.

主权项

1. A semiconductor device comprising:
a signal line; a first scan line; a second scan line; a first transistor comprising a source, a drain, and a gate; a second transistor comprising a source, a drain, and a gate; a pixel electrode; and a capacitor comprising an electrode and the pixel electrode over the electrode, wherein one of the source and the drain of the first transistor is electrically connected to the pixel electrode, wherein the first scan line is electrically connected to the gate of the first transistor, wherein the signal line is electrically connected to the other of the source and the drain of the first transistor and one of the source and the drain of the second transistor, wherein the second scan line is electrically directly connected to the gate of the second transistor and the electrode of the capacitor, and wherein the electrode of the capacitor comprises an oxide film comprising indium and zinc.