发明名称 |
Voltage switchable non-local spin-FET and methods for making same |
摘要 |
A voltage switchable non-local spin-FET is disclosed which provides a layer of chromia over a ferromagnetic substrate, such as cobalt. A film of graphene overlays the chromia, with a protective layer of metal oxide like cobalt oxide or iron oxide there between to prevent catalytic degradation of the graphene, which may occur. The graphene is provided with a contact, or source and drain, depending on the application. The spin-FET, which exhibits magnetic remanence, may be provided with a top gate of, e.g., cobalt or other ferromagnet such as iron. As an alternative to the ferromagnetic substrate, the device may be formed on a silicon or gallium arsenide base, or directly on a metal interconnect of an integrated circuit. |
申请公布号 |
US9202899(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201514667806 |
申请日期 |
2015.03.25 |
申请人 |
Quantum Devices, LLC |
发明人 |
Kelber Jeffry |
分类号 |
H01L21/02;H01L29/66;H01L29/82;H01L29/267;H01L23/532;H01L23/528 |
主分类号 |
H01L21/02 |
代理机构 |
Law Offices of Marc Labgold, P.C. |
代理人 |
Kelber Steven B.;Law Offices of Marc Labgold, P.C. |
主权项 |
1. An article of manufacture comprising;
a substrate comprised of a ferromagnetic material, a metal oxide, gallium arsenide or silicon; a layer of chromia formed on said ferromagnetic layer; a layer of 5-20 Å thickness of metal oxide over said chromia layer; and a film of graphene on said layer of metal oxide. |
地址 |
Rockville MD US |