发明名称 Voltage switchable non-local spin-FET and methods for making same
摘要 A voltage switchable non-local spin-FET is disclosed which provides a layer of chromia over a ferromagnetic substrate, such as cobalt. A film of graphene overlays the chromia, with a protective layer of metal oxide like cobalt oxide or iron oxide there between to prevent catalytic degradation of the graphene, which may occur. The graphene is provided with a contact, or source and drain, depending on the application. The spin-FET, which exhibits magnetic remanence, may be provided with a top gate of, e.g., cobalt or other ferromagnet such as iron. As an alternative to the ferromagnetic substrate, the device may be formed on a silicon or gallium arsenide base, or directly on a metal interconnect of an integrated circuit.
申请公布号 US9202899(B2) 申请公布日期 2015.12.01
申请号 US201514667806 申请日期 2015.03.25
申请人 Quantum Devices, LLC 发明人 Kelber Jeffry
分类号 H01L21/02;H01L29/66;H01L29/82;H01L29/267;H01L23/532;H01L23/528 主分类号 H01L21/02
代理机构 Law Offices of Marc Labgold, P.C. 代理人 Kelber Steven B.;Law Offices of Marc Labgold, P.C.
主权项 1. An article of manufacture comprising; a substrate comprised of a ferromagnetic material, a metal oxide, gallium arsenide or silicon; a layer of chromia formed on said ferromagnetic layer; a layer of 5-20 Å thickness of metal oxide over said chromia layer; and a film of graphene on said layer of metal oxide.
地址 Rockville MD US