发明名称 |
Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off |
摘要 |
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. |
申请公布号 |
US9203401(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201514755065 |
申请日期 |
2015.06.30 |
申请人 |
Ideal Power Inc. |
发明人 |
Alexander William C.;Blanchard Richard A. |
分类号 |
H01L29/86;H03K17/60;H02M11/00;H03K17/66;H01L29/73;H03K3/012 |
主分类号 |
H01L29/86 |
代理机构 |
Groover & Associates PLLC |
代理人 |
Groover & Associates PLLC ;Groover Gwendolyn S. S.;Groover, III Robert O. |
主权项 |
1. A method for switching a power bipolar semiconductor device which includes both an n-type emitter/collector region, and also a p-type base contact region, on each of both first and second opposing surfaces of a p-type semiconductor die, and which has an ON state and an OFF state, comprising the steps of:
during the ON state, driving base current into one of the base contact regions; and during transition to the OFF state,
shorting the base contact region on the first surface to the emitter/collector region on the first surface, while also shorting the base contact region on the second surface to the emitter/collector region on the second surface, andthereafter floating at least the base contact region on the first surface;wherein the base contact region on the first surface is not connected to the base contact region on the second surface, except through the semiconductor die itself;whereby externally-sourced current between the emitter/collector regions on the first and second opposing surfaces can thereby be controllably switched regardless of the direction of the current. |
地址 |
Austin TX US |