| 发明名称 | Method for controlling concentration of donor in GA<sub>2</sub>O<sub>3</sub>-based single crystal | ||
| 摘要 | A β-Ga2O3-based single crystal, including a first region that has side and bottom surfaces and is controlled so as to have a first donor concentration; and a second region that surrounds the side and bottom surfaces of the first region and is controlled so as to have a second donor concentration lower than the first donor concentration. | ||
| 申请公布号 | US9202876(B2) | 申请公布日期 | 2015.12.01 |
| 申请号 | US201514589763 | 申请日期 | 2015.01.05 |
| 申请人 | TAMURA CORPORATION | 发明人 | Sasaki Kohei |
| 分类号 | H01L21/425;H01L29/24;H01L29/06;H01L29/36 | 主分类号 | H01L21/425 |
| 代理机构 | McGinn IP Law Group, PLLC. | 代理人 | McGinn IP Law Group, PLLC. |
| 主权项 | 1. A β-Ga2O3-based single crystal, comprising: a first region that includes side and bottom surfaces and is controlled so as to have a first donor concentration; and a second region that surrounds the side and bottom surfaces of the first region and is controlled so as to have a second donor concentration lower than the first donor concentration, wherein a donor impurity included in the first region is selected from group IV elements, and wherein the first donor concentration is increased by activation of the donor impurity in the first region. | ||
| 地址 | Tokyo JP | ||