Method of fabricating vertical light emitting diode

摘要

Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.

主权项

1. A method of fabricating a light emitting diode (LED), the
method comprising: forming a semiconductor structure layer on a first surface of a growth substrate, the semiconductor structure layer comprising an active layer; forming a conductive support substrate on the semiconductor structure layer; abrading a second surface of the growth substrate; dry etching the second surface of the growth substrate, after abrading the second surface of the growth substrate; and forming a warpage compensation support substrate on the conductive support substrate after abrading the second surface of the growth substrate and before dry etching the second surface of the growth substrate.