发明名称 Thin substrate and mold compound handling using an electrostatic-chucking carrier
摘要 Thin substrates and mold compound handling is described using an electrostatic-chucking carrier. In one example, a first part of a plurality of silicon chip packages is formed on a front side of a silicon substrate wafer at a first processing station. An a carrier wafer of an electrostatic chuck is attached over the front side of the silicon wafer. The substrate wafer is moved to a second processing station. A second part of the plurality of silicon chip packages are formed on a back side of the silicon wafer at a second processing station. The electrostatic chuck is then released.
申请公布号 US9202801(B2) 申请公布日期 2015.12.01
申请号 US201314083338 申请日期 2013.11.18
申请人 APPLIED MATERIALS, INC. 发明人 Toh Chin Hock;Mahajan Uday;Kitowski Aksel
分类号 H01L51/40;H01L23/00;H01L23/48;H01L21/78;H01L21/768;H01L21/56;H01L21/683;H01L23/31 主分类号 H01L51/40
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method comprising: forming a first part of each of a plurality of silicon chip packages on a front side of a silicon substrate wafer at a first processing station; attaching a carrier wafer of an electrostatic chuck over the front side of the silicon wafer; moving the substrate wafer to a second processing station; forming a second part of each of the plurality of silicon chip packages on a back side of the silicon wafer at a second processing station; and releasing the electrostatic chuck.
地址 Santa Clara CA US