发明名称 |
Thin substrate and mold compound handling using an electrostatic-chucking carrier |
摘要 |
Thin substrates and mold compound handling is described using an electrostatic-chucking carrier. In one example, a first part of a plurality of silicon chip packages is formed on a front side of a silicon substrate wafer at a first processing station. An a carrier wafer of an electrostatic chuck is attached over the front side of the silicon wafer. The substrate wafer is moved to a second processing station. A second part of the plurality of silicon chip packages are formed on a back side of the silicon wafer at a second processing station. The electrostatic chuck is then released. |
申请公布号 |
US9202801(B2) |
申请公布日期 |
2015.12.01 |
申请号 |
US201314083338 |
申请日期 |
2013.11.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Toh Chin Hock;Mahajan Uday;Kitowski Aksel |
分类号 |
H01L51/40;H01L23/00;H01L23/48;H01L21/78;H01L21/768;H01L21/56;H01L21/683;H01L23/31 |
主分类号 |
H01L51/40 |
代理机构 |
Blakely, Sokoloff, Taylor & Zafman LLP |
代理人 |
Blakely, Sokoloff, Taylor & Zafman LLP |
主权项 |
1. A method comprising:
forming a first part of each of a plurality of silicon chip packages on a front side of a silicon substrate wafer at a first processing station; attaching a carrier wafer of an electrostatic chuck over the front side of the silicon wafer; moving the substrate wafer to a second processing station; forming a second part of each of the plurality of silicon chip packages on a back side of the silicon wafer at a second processing station; and releasing the electrostatic chuck. |
地址 |
Santa Clara CA US |