CuSn, CuZn AND CU2ZnSn SPUTTER TARGETS

摘要

The invention claims a three dimensional sputter target comprising CuZnSn material, CuZn material or CuSn material. Exemplary has a CuZnSn material a Cu content ranging from 40 atomic percent to 60 atomic percent; a Zn content ranging from 20 atomic percent to 30 atomic percent; and a Sn content ranging from 20 atomic percent to 30 atomic percent, wherein the three dimensional sputter target has at least one principal axis dimension greater than 500 mm and the CuZnSn material has a grain size ranging from 0.005 mm to 5 mm. Additional to that claims the invention a method of producing the three dimensional sputter target.