| 主权项 |
1. A manufacturing method of a semiconductor structure, comprising:
(a) using a temporary bonding layer to adhere a carrier to a first surface of a wafer, and forming a redistribution layer, an isolation layer, and a ball grid array on a second surface of the wafer opposite to the first surface; (b) adhering the second surface of the wafer to an ultraviolet tape that is located on a frame, and removing the temporary bonding layer and the carrier; (c) adhering a protection tape to the first surface of the wafer to cover an image-sensing region of the wafer, wherein an area of the protection tape is larger than an area of the wafer, such that the protection tape protrudes from the wafer; (d) using ultraviolet light to irradiate the ultraviolet tape, such that adhesion of the ultraviolet tape is eliminated; (e) adhering a dicing tape to the protection tape and the frame, and removing the ultraviolet tape; (f) using a first cutter to dice the wafer from the second surface of the wafer, such that a plurality of chips and a plurality of gaps between the chips are formed; and (g) using a second cutter with a width that is smaller than a width of the first cutter to cut the protection tape along the gaps, such that the cut protection tapes respectively protrude from the chips. |
